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可控低温化学气相沉积生长及不同形貌 SnO2 纳米锥阵列的场发射性能研究。

Controllable low-temperature chemical vapor deposition growth and morphology dependent field emission property of SnO2 nanocone arrays with different morphologies.

机构信息

Key Laboratory of Macromolecular Science of Shaanxi Province, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710062, China.

出版信息

ACS Appl Mater Interfaces. 2013 Apr 24;5(8):3033-41. doi: 10.1021/am303012u. Epub 2013 Apr 5.

DOI:10.1021/am303012u
PMID:23514640
Abstract

Vertically aligned SnO2 nanocones with different morphologies have been directly grown on fluorine-doped tin oxide (FTO) glass substrates in a large area by heating a mixture of stannous chloride dihydrate (SnCl2·2H2O) and anhydrous zinc chloride (ZnCl2) at 600 °C in air. Control over the SnO2 nanocone arrays with different morphologies is achieved by adjusting the heat treatment time. The SnO2 nanocones are single crystalline with the tetragonal structure. A single-layer SnO2 nanoparticle film is first formed via the vapor-solid (VS) process due to the decentralization function of ZnCl2 vapor, and the SnO2 nanoparticles served as seeds and grew into nanocone arrays via the VS process. The sharp-tipped nanostructure formation may originate from a concentration gradient of reactant in the growth process. The as-obtained whiskerlike nanocone arrays exhibit enhanced field emission properties in comparison with typical nanoconelike structure arrays and other SnO2 nanostructured materials reported previously, and the turn-on field and field-enhancement factor is 1.19 V/μm and 3110, respectively. The experimental result is consistent with the Utsumi's relative figure of merit for pillar-shaped emitters.

摘要

在空气中,通过加热二水合氯化亚锡(SnCl2·2H2O)和无水氯化锌(ZnCl2)的混合物,在 600°C 的温度下,可以在大面积的氟掺杂氧化锡(FTO)玻璃衬底上直接生长具有不同形貌的垂直排列的 SnO2 纳米锥。通过调整热处理时间,可以控制 SnO2 纳米锥阵列具有不同的形貌。SnO2 纳米锥为具有四方结构的单晶。由于 ZnCl2 蒸气的分散作用,首先通过汽-固(VS)过程形成单层 SnO2 纳米颗粒膜,然后 SnO2 纳米颗粒作为种子通过 VS 过程生长成纳米锥阵列。锐化的纳米结构的形成可能源于生长过程中反应物的浓度梯度。与之前报道的典型纳米锥状结构阵列和其他 SnO2 纳米结构材料相比,所获得的须状纳米锥阵列表现出增强的场发射性能,开启场和场增强因子分别为 1.19 V/μm 和 3110。实验结果与 Utsumi 相对值对于柱形发射器是一致的。

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