Kim Chan Kyu, Lee Seok Hee, In Jung Hwan, Lee Hak Jae, Jeong Sungho
Opt Express. 2013 Nov 4;21 Suppl 6:A1018-27. doi: 10.1364/OE.21.0A1018.
This work reports the capability of depth profile analysis of thin CuIn1-xGa(x)Se2 (CIGS) absorber layer (1.89 μm) with a sub-hundred nanometer resolution by laser induced breakdown spectroscopy (LIBS). The LIBS analysis was carried out with a commercial CIGS solar cell on flexible substrate by using a pulsed Nd:YAG laser (λ = 532 nm, τ = 5 ns, top-hat profile) and an intensified charge-coupled device spectrometer in atmospheric conditions. The measured LIBS elemental profiles across the CIGS layer agreed closely to those measured by secondary ion mass spectrometry. The resolution of depth profile analysis was about 88 nm. Owing to the short measurement time of LIBS and the capability of in-air measurement, it is expected that LIBS can be applied for in situ analysis of elemental composition and their distribution across the film thickness during development and manufacturing of CIGS solar cells.
本研究报告了利用激光诱导击穿光谱法（LIBS）对厚度为1.89μm的薄铜铟镓硒（CIGS）吸收层进行深度剖析分析的能力，其分辨率可达亚100纳米。通过使用脉冲Nd:YAG激光器（λ = 532 nm，τ = 5 ns，平顶光束轮廓）和增强型电荷耦合器件光谱仪，在大气环境下对柔性衬底上的商用CIGS太阳能电池进行了LIBS分析。所测得的CIGS层上的LIBS元素分布曲线与二次离子质谱法测得的结果非常吻合。深度剖析分析的分辨率约为88纳米。由于LIBS测量时间短且具备空气中测量的能力，预计LIBS可应用于CIGS太阳能电池开发和制造过程中薄膜厚度方向上元素组成及其分布的原位分析。
