Xiu Junshan, Liu Shiming, Fu Shenggui, Wang Tao, Meng Mingxing, Liu Yunyan
Appl Opt. 2019 Feb 1;58(4):1040-1047. doi: 10.1364/AO.58.001040.
The composition of Cu, In, Ga, and Se constituting the Cu(In,Ga)Se (CIGS) layer is important for the performance of the thin film. Laser-induced breakdown spectroscopy (LIBS) is very useful in quantitative analysis of elemental composition. In this paper, detection parameters of LIBS were optimized, and the CIGS thin films deposited at different sputtering powers were detected. LIBS results showed that the intensity ratio (Ga/(ln+Ga)) of the analytical spectral line of CIGS film increased initially then reduced with an increase of the sputtering power, and the evolution was consistent with optical bandgaps calculated from the transmission spectra. The intensity ratios of Ga/(ln+Ga) and Cu/(ln+Ga) detected were very highly correlated corresponding to the value obtained from energy dispersive x-ray spectroscopy. All results indicate that it is available and feasible of LIBS to fabricate high-performance CIGS thin film using the one-step radio frequency magnetron sputtering method.
构成铜铟镓硒（CIGS）层的铜、铟、镓和硒的成分对薄膜性能至关重要。激光诱导击穿光谱法（LIBS）在元素成分定量分析中非常有用。本文对LIBS的检测参数进行了优化，并对不同溅射功率下沉积的CIGS薄膜进行了检测。LIBS结果表明，CIGS薄膜分析谱线的强度比（Ga/(In+Ga)）随溅射功率的增加先增大后减小，且该变化与由透射光谱计算得到的光学带隙一致。检测得到的Ga/(In+Ga)和Cu/(In+Ga)强度比与能量色散X射线光谱法得到的值高度相关。所有结果表明，利用一步射频磁控溅射法采用LIBS制备高性能CIGS薄膜是可行的。
