CNRS, Univ. Bordeaux , ICMCB, UPR9048, F-33600 Pessac, France.
ACS Appl Mater Interfaces. 2014 Mar 12;6(5):3413-20. doi: 10.1021/am4055386. Epub 2014 Feb 25.
CuO thin films were prepared by radio frequency magnetron sputtering using a copper target in a (Ar + O2) reactive mixture. Different sputtering parameters were varied including oxygen flow rate, total pressure, target-substrate distance, substrate temperature and target orientation. As expected, the thin film chemical composition is strongly dependent on the oxygen flow rate. CuO thin films having a good electronic conductivity (9.3 × 10(-1) S·cm(-1)) were obtained with an oxygen concentration of 12%. The texture and the columnar growth are amplified when the target is tilted. Preliminary electrochemical results highlight that CuO thin film performances in lithium systems are tightly related to their morphology and structure.
采用射频磁控溅射法，以铜靶为靶材，在（Ar+O2）反应混合物中制备了 CuO 薄膜。改变了不同的溅射参数，包括氧流量、总压力、靶-基底距离、基底温度和靶材取向。正如预期的那样，薄膜的化学成分强烈依赖于氧流量。当氧浓度为 12%时，获得了具有良好导电性（9.3×10^(-1) S·cm^(-1)）的 CuO 薄膜。当靶材倾斜时，织构和柱状生长得到增强。初步的电化学结果表明，CuO 薄膜在锂离子体系中的性能与其形态和结构密切相关。
