Opt Lett. 2014 Feb 15;39(4):1042-5. doi: 10.1364/OL.39.001042.
We report about a newly devised throughput-scalable fabrication method for high-quality periodic submicron structures. The process is demonstrated for optical transmission gratings in fused silica with a period of 800 nm (1250 lines/mm) to be used in laser pulse compression. The technology is based on an innovative advancement of i-line proximity photolithography performed in a mask aligner. The aerial image is encoded in a rigorously optimized electron-beam-written three-level phase mask which is illuminated by an adapted multipole configuration of incidence angles. In comparison to conventional proximity lithography, the process enables a significantly higher resolution while maintaining a good depth of focus--in contrast to lithography based on direct Talbot-imaging. Details about the grating fabrication process and characterization of fabricated pulse compression grating wafers are presented. The gratings show a diffraction efficiency of 97% at a wavelength of 1030 nm and a wavefront error comparable to gratings fabricated by electron-beam lithography.
我们报告了一种新设计的高通量可扩展制造方法,用于高质量的周期性亚微米结构。该工艺用于在熔融石英中制造周期为 800nm(1250 线/mm)的光学传输光栅,用于激光脉冲压缩。该技术基于在掩模对准器中进行的创新 i 线近接光刻技术。在经过严格优化的电子束写入的三级相位掩模中对像进行编码,该相位掩模由入射角的自适应多极配置进行照明。与传统的近接光刻相比,该工艺在保持良好的景深的同时,实现了更高的分辨率——与基于直接泰伯成像的光刻相比。本文介绍了光栅制造工艺的细节和制造的脉冲压缩光栅晶片的特性。在 1030nm 波长处,光栅的衍射效率为 97%,波前误差可与电子束光刻制造的光栅相媲美。