Department of Physics, University of Illinois, Urbana, Illinois 61801-3080, USA and Department of Physics, Princeton University, Princeton, New Jersey 08544, USA and Micro and Nanotechnology Laboratory, University of Illinois, Urbana, Illinois 61801, USA.
Department of Electrical and Computer Engineering, University of Illinois, Urbana, IIllinois 61801, USA and Micro and Nanotechnology Laboratory, University of Illinois, Urbana, Illinois 61801, USA.
Phys Rev Lett. 2014 Jan 31;112(4):046801. doi: 10.1103/PhysRevLett.112.046801. Epub 2014 Jan 27.
We theoretically predict that thin-film topological crystalline insulators can host various quantum anomalous Hall phases when doped by ferromagnetically ordered dopants. Any Chern number between ±4 can, in principle, be reached as a result of the interplay between (a) the induced Zeeman field, depending on the magnetic doping concentration, (b) the structural distortion, either intrinsic or induced by a piezoelectric material through the proximity effect, and (c) the thickness of the thin film. We propose a heterostructure to realize quantum anomalous Hall phases with Chern numbers that can be tuned by electric fields.
我们从理论上预测，当用铁磁有序掺杂剂掺杂时，薄膜拓扑晶体绝缘体可以承载各种量子反常霍尔相。由于(a) 依赖于磁掺杂浓度的感应塞曼场，(b) 由结构变形引起的，无论是由压电材料通过近邻效应引起的内在变形还是诱导变形，以及(c) 薄膜的厚度，(a) 感应塞曼场，(b) 结构变形，无论是由压电材料通过近邻效应引起的内在变形还是诱导变形，以及(c) 薄膜的厚度，这三种因素的相互作用，原则上可以达到在 ±4 之间的任意陈数。我们提出了一种异质结构来实现陈数可调的量子反常霍尔相，这些陈数可以通过电场来调控。
