Jiangsu Key Laboratory of Biofunctional Materials, School of Chemistry and Materials Science, Nanjing Normal University , Nanjing 210023, People's Republic of China.
ACS Nano. 2014 Apr 22;8(4):3761-70. doi: 10.1021/nn5004315. Epub 2014 Mar 10.
Due to their unique electronic and optoelectronic properties, tin selenide nanostructures show great promise for applications in energy storage and photovoltaic devices. Despite the great progress that has been achieved, the phase-controlled synthesis of two-dimensional (2D) tin selenide nanostructures remains a challenge, and their use in supercapacitors has not been explored. In this paper, 2D tin selenide nanostructures, including pure SnSe2 nanodisks (NDs), mixed-phase SnSe-SnSe2 NDs, and pure SnSe nanosheets (NSs), have been synthesized by reacting SnCl2 and trioctylphosphine (TOP)-Se with borane-tert-butylamine complex (BTBC) and 1,3-dimethyl-3,4,5,6-tetrahydro-2(1H)-pyrimidinone. Utilizing the interplay of TOP and BTBC and changing only the amount of BTBC, the phase-controlled synthesis of 2D tin selenide nanostructures is realized for the first time. Phase-dependent pseudocapacitive behavior is observed for the resulting 2D nanostructures. The specific capacitances of pure SnSe2 NDs (168 F g(-1)) and SnSe NSs (228 F g(-1)) are much higher than those of other reported materials (e.g., graphene-Mn3O4 nanorods and TiN mesoporous spheres); thus, these tin selenide materials were used to fabricate flexible, all-solid-state supercapacitors. Devices fabricated with these two tin selenide materials exhibited high areal capacitances, good cycling stabilities, excellent flexibilities, and desirable mechanical stabilities, which were comparable to or better than those reported recently for other solid-state devices based on graphene and 3D GeSe2 nanostructures. Additionally, the rate capability of the SnSe2 NDs device was much better than that of the SnSe NS device, indicating that SnSe2 NDs are promising active materials for use in high-performance, flexible, all-solid-state supercapacitors.
由于其独特的电子和光电性能，硒化锡纳米结构在储能和光伏器件中有很大的应用前景。尽管已经取得了很大的进展，但二维（2D）硒化锡纳米结构的相控合成仍然是一个挑战，其在超级电容器中的应用尚未得到探索。在本文中，通过将 SnCl2 和 TOP-Se 与硼烷-叔丁胺络合物（BTBC）和 1,3-二甲基-3,4,5,6-四氢-2(1H)-嘧啶酮反应，合成了二维硒化锡纳米结构，包括纯 SnSe2 纳米盘（NDs）、混合相 SnSe-SnSe2 NDs 和纯 SnSe 纳米片（NSs）。利用 TOP 和 BTBC 的相互作用，并仅改变 BTBC 的用量，首次实现了二维硒化锡纳米结构的相控合成。所得二维纳米结构表现出与相相关的赝电容行为。纯 SnSe2 NDs（168 F g(-1)）和 SnSe NSs（228 F g(-1)）的比电容远高于其他报道的材料（例如，石墨烯-Mn3O4 纳米棒和 TiN 介孔球）；因此，这些锡硒化物材料被用于制造柔性全固态超级电容器。用这两种锡硒化物材料制造的器件表现出高面电容、良好的循环稳定性、优异的柔韧性和理想的机械稳定性，可与最近报道的基于石墨烯和 3D GeSe2 纳米结构的其他固态器件相媲美。此外，SnSe2 NDs 器件的倍率性能远优于 SnSe NS 器件，表明 SnSe2 NDs 是用于高性能、柔性、全固态超级电容器的有前途的活性材料。
