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在石墨烯中进行缺陷和孔工程的一般途径。

A general route towards defect and pore engineering in graphene.

机构信息

Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.

出版信息

Small. 2014 Jun 12;10(11):2280-4. doi: 10.1002/smll.201303671. Epub 2014 Mar 7.

Abstract

Defect engineering in graphene is important for tailoring graphene's properties thus applicable in various applications such as porous membranes and ultra-capacitors. In this paper, we report a general route towards defect- and pore- engineering in graphene through remote plasma treatments. Oxygen plasma irradiation was employed to create homogenous defects in graphene with controllable density from a few to ≈10(3) (μm(-2)). The created defects can be further enlarged into nanopores by hydrogen plasma anisotropic etching with well-defined pore size of a few nm or above. The achieved smallest nanopores are ≈2 nm in size, showing the potential for ultra-small graphene nanopores fabrication.

摘要

在石墨烯中进行缺陷工程对于调整石墨烯的性质至关重要,从而使其适用于各种应用,如多孔膜和超级电容器。在本文中,我们报告了一种通过远程等离子体处理在石墨烯中进行缺陷和孔工程的通用方法。采用氧等离子体辐照在石墨烯中产生均匀的缺陷,其密度可从几个到≈10(3)(μm(-2))进行控制。通过氢等离子体各向异性刻蚀,可以将所产生的缺陷进一步扩大成具有几个纳米或以上的确定孔径的纳米孔。所获得的最小纳米孔约为 2nm,显示出制造超小孔石墨烯纳米孔的潜力。

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