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用于光电流产生的非对称掺杂双层石墨烯的外延生长。

Epitaxial growth of asymmetrically-doped bilayer graphene for photocurrent generation.

机构信息

Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, People's Republic of China.

出版信息

Small. 2014 Jun 12;10(11):2245-50. doi: 10.1002/smll.201303696. Epub 2014 Mar 18.

DOI:10.1002/smll.201303696
PMID:24644002
Abstract

An asymmetrically doped bilayer graphene is grown by modulation-doped chemical vapor deposition, which consists of one intrinsic layer and one nitrogen-doped layer according to AB stacking. The asymmetrically doped bilayer crystalline profile is found to extend the identical registry as adjacent pristine bilayer region, thus forming single-crystalline bilayer graphene p-n junctions. Efficient photocurrent with responsivity as high as 0.2 mA/W is generated at the bilayer p-n junctions via a hot carrier-assisted mechanism.

摘要

通过调制掺杂化学气相沉积生长了一种非对称掺杂双层石墨烯,它由一个本征层和一个根据 AB 堆垛的氮掺杂层组成。发现非对称掺杂双层晶体形貌延伸与相邻原始双层区域相同的晶格格点,从而形成单晶双层石墨烯 p-n 结。通过热载流子辅助机制,在双层 p-n 结处产生了高达 0.2 mA/W 的高效光电流响应。

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