Department of Physics, College of Science, Tabriz Branch, Islamic Azad University, Tabriz 5157944533, Iran.
Nanoscale Res Lett. 2014 Mar 19;9(1):131. doi: 10.1186/1556-276X-9-131.
Quadratic electro-optic effects (QEOEs) and electro-absorption (EA) process in a GaN/AlGaN spherical quantum dot are theoretically investigated. It is found that the magnitude and resonant position of third-order nonlinear optical susceptibility depend on the nanostructure size and aluminum mole fraction. With increase of the well width and barrier potential, quadratic electro-optic effect and electro-absorption process nonlinear susceptibilities are decreased and blueshifted. The results show that the DC Kerr effect in this case is much larger than that in the bulk case. Finally, it is observed that QEOEs and EA susceptibilities decrease and broaden with the decrease of relaxation time.
理论研究了 GaN/AlGaN 球形量子点中的二次电光效应（QEOE）和电吸收（EA）过程。结果表明，三阶非线性光学系数的大小和共振位置取决于纳米结构的尺寸和铝摩尔分数。随着势阱宽度和势垒势的增加，二次电光效应和电吸收过程的非线性系数减小且蓝移。结果表明，在这种情况下的直流克尔效应远大于体情况。最后，观察到随着弛豫时间的减小，QEOE 和 EA 系数减小且展宽。
