School of Materials Science and Engineering and ‡School of Electronic Science and Applied Physics, Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology , Hefei 230009, People's Republic of China.
ACS Nano. 2014 Apr 22;8(4):4015-22. doi: 10.1021/nn501001j. Epub 2014 Mar 31.
Silicon nanostructure-based solar cells have lately intrigued intensive interest because of their promising potential in next-generation solar energy conversion devices. Herein, we report a silicon nanowire (SiNW) array/carbon quantum dot (CQD) core-shell heterojunction photovoltaic device by directly coating Ag-assisted chemical-etched SiNW arrays with CQDs. The heterojunction with a barrier height of 0.75 eV exhibited excellent rectifying behavior with a rectification ratio of 10(3) at ±0.8 V in the dark and power conversion efficiency (PCE) as high as 9.10% under AM 1.5G irradiation. It is believed that such a high PCE comes from the improved optical absorption as well as the optimized carrier transfer and collection capability. Furthermore, the heterojunction could function as a high-performance self-driven visible light photodetector operating in a wide switching wavelength with good stability, high sensitivity, and fast response speed. It is expected that the present SiNW array/CQD core-shell heterojunction device could find potential applications in future high-performance optoelectronic devices.
基于硅纳米结构的太阳能电池由于其在下一代太阳能转换器件中的巨大潜力而引起了广泛关注。在此，我们报告了一种硅纳米线（SiNW）阵列/碳量子点（CQD）核壳异质结光伏器件，该器件通过直接在 Ag 辅助化学腐蚀的 SiNW 阵列上涂覆 CQDs 制备得到。该异质结的势垒高度为 0.75 eV，在黑暗中表现出优异的整流性能，在±0.8 V 时的整流比为 10(3)，在 AM 1.5G 照射下的功率转换效率（PCE）高达 9.10%。据信，如此高的 PCE 源于改进的光吸收以及优化的载流子输运和收集能力。此外，该异质结可用作高性能自驱动可见光光电探测器，在宽开关波长范围内工作，具有良好的稳定性、高灵敏度和快速响应速度。预计本 SiNW 阵列/CQD 核壳异质结器件在未来的高性能光电设备中具有潜在的应用前景。
