Jiang Yurong, Feng Yanxing, Jiang Yong, Liu Kaikai
College of Physics and Materials Science, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China.
ACS Omega. 2019 Jul 22;4(7):12418-12424. doi: 10.1021/acsomega.9b00621. eCollection 2019 Jul 31.
MoO quantum dots were inserted between the Si nanowires (SiNWs) and Cu contacts to form the MoO /SiNW heterojunctions via the low-temperature solution process. The common Schottky heterojunction of Cu/SiNWs is used as the referred device, and the photoelectric characteristics of Cu/MoO /Si structures are detailedly investigated. The results indicate that the inset of MoO between Cu and SiNWs obviously enhances photoelectric conversion efficiency from 1.58 to 3.92%, and photodetection characteristics have also improved compared to the referred device. We attribute these experimental findings to the fact that the incorporation of MoO quantum dots into the Cu/Si heterojunction could enhance the transport of holes and inhibit the injection of electrons from Si into the top Cu electrode. In addition, it is believed that such an improved performance also comes from the improved optical absorption as well as the optimized carrier transfer and collection capability of MoO /SiNW radial heterojunctions.
通过低温溶液法将MoO量子点插入硅纳米线（SiNWs）与铜触点之间，以形成MoO /SiNW异质结。将常见的Cu/SiNWs肖特基异质结用作参考器件，并详细研究了Cu/MoO /Si结构的光电特性。结果表明，在铜和硅纳米线之间插入MoO明显提高了光电转换效率，从1.58%提高到3.92%，并且与参考器件相比，光电探测特性也有所改善。我们将这些实验结果归因于将MoO量子点掺入Cu/Si异质结中可以增强空穴传输并抑制电子从硅注入顶部铜电极这一事实。此外，据信这种性能的改善还来自于光吸收的改善以及MoO /SiNW径向异质结的载流子转移和收集能力的优化。
