Du Ke, Wathuthanthri Ishan, Liu Yuyang, Kang Yong Tae, Choi Chang-Hwan
Department of Mechanical Engineering, Stevens Institute of Technology, Hoboken, NJ 07030, USA.
Nanotechnology. 2014 Apr 25;25(16):165301. doi: 10.1088/0957-4484/25/16/165301. Epub 2014 Mar 26.
In this paper, we introduce a simple fabrication technique which can pattern high-aspect-ratio polymer nanowire structures of photoresist films by using a maskless one-step oxygen plasma etching process. When carbon-based photoresist materials on silicon substrates are etched by oxygen plasma in a metallic etching chamber, nanoparticles such as antimony, aluminum, fluorine, silicon or their compound materials are self-generated and densely occupy the photoresist polymer surface. Such self-masking effects result in the formation of high-aspect-ratio vertical nanowire arrays of the polymer in the reactive ion etching mode without the necessity of any artificial etch mask. Nanowires fabricated by this technique have a diameter of less than 50 nm and an aspect ratio greater than 20. When such nanowires are fabricated on lithographically pre-patterned photoresist films, hierarchical and hybrid nanostructures of polymer are also conveniently attained. This simple and high-throughput fabrication technique for polymer nanostructures should pave the way to a wide range of applications such as in sensors, energy storage, optical devices and microfluidics systems.
在本文中，我们介绍了一种简单的制造技术，该技术可通过无掩膜一步氧等离子体蚀刻工艺对光刻胶膜的高纵横比聚合物纳米线结构进行图案化。当硅衬底上的碳基光刻胶材料在金属蚀刻腔中被氧等离子体蚀刻时，诸如锑、铝、氟、硅或其复合材料等纳米颗粒会自行生成并密集占据光刻胶聚合物表面。这种自掩膜效应导致在反应离子蚀刻模式下形成聚合物的高纵横比垂直纳米线阵列，而无需任何人工蚀刻掩膜。通过该技术制造的纳米线直径小于50纳米，纵横比大于20。当在光刻预图案化的光刻胶膜上制造此类纳米线时，也可方便地获得聚合物的分级和混合纳米结构。这种用于聚合物纳米结构的简单且高通量的制造技术应为传感器、能量存储、光学器件和微流体系统等广泛应用铺平道路。
