大面积二维 MoS₂(₁-x) Se₂x 半导体合金的生长。
Growth of large-area 2D MoS₂(₁-x) Se₂x semiconductor alloys.
机构信息
Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory for Structural, Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China; CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China; School of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou, 730000, P. R. China.
出版信息
Adv Mater. 2014 May;26(17):2648-53, 2613. doi: 10.1002/adma.201306095. Epub 2014 Feb 20.
Semiconducting MoS₂(₁-x) Se₂x mono-layers where x = 0-0.40 are successfully grown over large areas. A random arrangement of the S and Se atoms and a tunable bandgap photoluminescence are observed. Atomically thin, 2D semiconductor alloys with tunable bandgaps have potential applications in nano- and opto-electronics. Field-effect transistors fabricated with the monolayers exhibit high on/off ratios of >10(5).
成功地在大面积上生长出半导体 MoS₂(₁-x) Se₂x 单层，其中 x = 0-0.40。观察到 S 和 Se 原子的随机排列和可调带隙光致发光。具有可调带隙的原子层状 2D 半导体合金在纳米和光电子学中有潜在的应用。用这些单层制成的场效应晶体管具有>10(5)的高开关比。
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