Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
Nanoscale. 2017 Sep 21;9(36):13786-13793. doi: 10.1039/c7nr04968d.
Despite the substantial progress in the development of two-dimensional (2D) materials from conventional layered crystals, it still remains particularly challenging to produce high-quality 2D non-layered semiconductor alloys which may bring in some unique properties and new functions. In this work, the synthesis of well-oriented 2D non-layered CdSSe semiconductor alloy flakes with tunable compositions and optical properties is established. Structural analysis reveals that the 2D non-layered alloys follow an incommensurate van der Waals epitaxial growth pattern. Photoluminescence measurements show that the 2D alloys have composition-dependent direct bandgaps with the emission peak varying from 1.8 eV to 2.3 eV, coinciding well with the density functional theory calculations. Furthermore, photodetectors based on the CdSSe flakes exhibit a high photoresponsivity of 703 A W with an external quantum efficiency of 1.94 × 10 and a response time of 39 ms. Flexible devices fabricated on a thin mica substrate display good mechanical stability upon repeated bending. This work suggests a facile and general method to produce high-quality 2D non-layered semiconductor alloys for next-generation optoelectronic devices.
尽管在二维(2D)材料的开发方面已经取得了实质性的进展,但是从传统的层状晶体中生产高质量的二维非层状半导体合金仍然具有特别的挑战性,因为这些合金可能会带来一些独特的性质和新的功能。在这项工作中,我们成功合成了具有可调成分和光学性能的取向良好的二维非层状 CdSSe 半导体合金薄片。结构分析表明,二维非层状合金遵循非共格范德瓦尔斯外延生长模式。光致发光测量表明,二维合金具有与组成相关的直接带隙,发射峰从 1.8 eV 到 2.3 eV 变化,与密度泛函理论计算吻合良好。此外,基于 CdSSe 薄片的光电探测器表现出高达 703 A W 的高光响应率,外量子效率为 1.94×10,响应时间为 39 ms。在薄云母衬底上制造的柔性器件在反复弯曲时表现出良好的机械稳定性。这项工作为下一代光电器件提供了一种简便而通用的方法来制备高质量的二维非层状半导体合金。