Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China; Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195, Berlin, Germany.
Small. 2014 Jun 12;10(11):2215-25. doi: 10.1002/smll.201303698. Epub 2014 Mar 31.
The synthesis and structures of graphene on Ru(0001) and Pt(111), silicene on Ag(111) and Ir(111) and the honeycomb hafnium lattice on Ir(111) are reviewed. Epitaxy on a transition metal (TM) substrate is a pro-mising method to produce a variety of two dimensional (2D) atomic crystals which potentially can be used in next generation electronic devices. This method is particularly valuable in the case of producing 2D materials that do not exist in 3D forms, for instance, silicene. Based on the intensive investigations of epitaxial graphene on TM in recent years, it is known that the quality of graphene is affected by many factors, including the interaction between the 2D material overlayer and the substrate, the lattice mismatch, the nucleation density at the early stage of growth. It is found that these factors also apply to many other epitaxial 2D crystals on TM. The knowledge from the reviewed systems will shine light on the design and synthesis of new 2D crystals with novel properties.
综述了 Ru(0001) 和 Pt(111) 上的石墨烯、Ag(111) 和 Ir(111) 上的硅烯以及 Ir(111) 上的六方锆晶格的合成和结构。在过渡金属 (TM) 衬底上外延生长是一种很有前途的方法，可以制备出各种二维 (2D) 原子晶体，这些晶体有可能用于下一代电子设备中。对于那些不存在三维形式的二维材料，例如硅烯，这种方法尤其有价值。基于近年来对 TM 上外延石墨烯的深入研究，人们已经知道石墨烯的质量受到许多因素的影响，包括二维材料覆盖层与衬底之间的相互作用、晶格失配、生长初期的成核密度等。研究发现，这些因素也适用于 TM 上的许多其他外延二维晶体。从综述的体系中得到的知识将为设计和合成具有新颖性质的新型二维晶体提供启示。
