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二维五方 BP 片层:高稳定性、应变可调谐的电子结构和优异的力学性能。

Two-dimensional Penta-BP Sheets: High-stability, Strain-tunable Electronic Structure and Excellent Mechanical Properties.

机构信息

State Key Laboratory of Superhard Materials, Jilin University, No. 2699 Qianjin Street, Changchun, 130012, P.R. China.

出版信息

Sci Rep. 2017 May 25;7(1):2404. doi: 10.1038/s41598-017-02011-9.

DOI:10.1038/s41598-017-02011-9
PMID:28546586
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5445080/
Abstract

Two-dimensional (2D) crystals exhibit unique and exceptional properties and show promise for various applications. In this work, we systematically studied the structures of a 2D boronphosphide (BP) monolayer with different stoichiometric ratios (BP, x = 1, 2, 3, 4, 5, 6 and 7) and observed that each compound had a stable 2D structure with metallic or semiconducting electronic properties. Surprisingly, for the BP compounds, we discovered a rare penta-graphene-like 2D structure with a tetragonal lattice. This monolayer was a semiconductor with a quasi-direct band gap of 2.68 eV. More importantly, investigation of the strain effect revealed that small uniaxial strain can trigger the band gap of the penta-BP monolayer to transition from a quasi-direct to direct band gap, whereas moderate biaxial strain can cause the penta-BP to transform from a semiconductor into a metal, indicating the great potential of this material for nanoelectronic device applications based on strain-engineering techniques. The wide and tuneable band gap of monolayer penta-BP makes it more advantageous for high-frequency-response optoelectronic materials than the currently popular 2D systems, such as transition metal dichalcogenides and black phosphorus. These unique structural and electronic properties of 2D BP sheets make them promising for many potential applications in future nanodevices.

摘要

二维(2D)晶体具有独特而卓越的性质,并在各种应用中显示出前景。在这项工作中,我们系统地研究了不同化学计量比(BP,x=1、2、3、4、5、6 和 7)的二维硼磷(BP)单层的结构,观察到每个化合物都具有稳定的 2D 结构,具有金属或半导体电子性质。令人惊讶的是,对于 BP 化合物,我们发现了一种罕见的五重石墨烯状二维结构,具有四方晶格。这种单层是一种半导体,具有 2.68 eV 的准直接带隙。更重要的是,应变效应的研究表明,小的单轴应变可以使五重 BP 单层的带隙从准直接带隙转变为直接带隙,而适度的双轴应变可以使五重 BP 从半导体转变为金属,这表明这种材料在基于应变工程技术的纳米电子器件应用中有很大的潜力。单层五重 BP 的宽带隙和可调谐带隙使其比目前流行的二维系统(如过渡金属二卤化物和黑磷)更有利于高频响应光电器件。二维 BP 薄片的这些独特的结构和电子性质使它们在未来纳米器件中有许多潜在的应用前景。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/761b/5445080/159cdc2403d4/41598_2017_2011_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/761b/5445080/5c3eb6f250e3/41598_2017_2011_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/761b/5445080/3b6627b85ab7/41598_2017_2011_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/761b/5445080/e2318d308d82/41598_2017_2011_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/761b/5445080/e0695ec6725b/41598_2017_2011_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/761b/5445080/7cdb08450544/41598_2017_2011_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/761b/5445080/8a1ca92418eb/41598_2017_2011_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/761b/5445080/159cdc2403d4/41598_2017_2011_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/761b/5445080/5c3eb6f250e3/41598_2017_2011_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/761b/5445080/3b6627b85ab7/41598_2017_2011_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/761b/5445080/e2318d308d82/41598_2017_2011_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/761b/5445080/e0695ec6725b/41598_2017_2011_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/761b/5445080/7cdb08450544/41598_2017_2011_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/761b/5445080/8a1ca92418eb/41598_2017_2011_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/761b/5445080/159cdc2403d4/41598_2017_2011_Fig7_HTML.jpg

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