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在垂直排列的碳纳米纤维阵列上进行铝掺杂氧化锌/氧化铝双层的原子层沉积。

Atomic layer deposition of Al-doped ZnO/Al2O3 double layers on vertically aligned carbon nanofiber arrays.

作者信息

Malek Gary A, Brown Emery, Klankowski Steven A, Liu Jianwei, Elliot Alan J, Lu Rongtao, Li Jun, Wu Judy

机构信息

Department of Physics and Astronomy, University of Kansas , Lawrence, Kansas 66045, United States.

出版信息

ACS Appl Mater Interfaces. 2014 May 14;6(9):6865-71. doi: 10.1021/am5006805. Epub 2014 Apr 23.

DOI:10.1021/am5006805
PMID:24689702
Abstract

High-aspect-ratio, vertically aligned carbon nanofibers (VACNFs) were conformally coated with aluminum oxide (Al2O3) and aluminum-doped zinc oxide (AZO) using atomic layer deposition (ALD) in order to produce a three-dimensional array of metal-insulator-metal core-shell nanostructures. Prefunctionalization before ALD, as required for initiating covalent bonding on a carbon nanotube surface, was eliminated on VACNFs due to the graphitic edges along the surface of each CNF. The graphitic edges provided ideal nucleation sites under sequential exposures of H2O and trimethylaluminum to form an Al2O3 coating up to 20 nm in thickness. High-resolution transmission electron microscopy (HRTEM) and scanning electron microscopy images confirmed the conformal core-shell AZO/Al2O3/CNF structures while energy-dispersive X-ray spectroscopy verified the elemental composition of the different layers. HRTEM selected area electron diffraction revealed that the as-made Al2O3 by ALD at 200 °C was amorphous, and then, after annealing in air at 450 °C for 30 min, was converted to polycrystalline form. Nevertheless, comparable dielectric constants of 9.3 were obtained in both cases by cyclic voltammetry at a scan rate of 1000 V/s. The conformal core-shell AZO/Al2O3/VACNF array structure demonstrated in this work provides a promising three-dimensional architecture toward applications of solid-state capacitors with large surface area having a thin, leak-free dielectric.

摘要

使用原子层沉积(ALD)技术,在高纵横比的垂直排列碳纳米纤维(VACNFs)上保形涂覆氧化铝(Al2O3)和铝掺杂氧化锌(AZO),以制备金属-绝缘体-金属核壳纳米结构的三维阵列。由于每个碳纳米管表面的石墨边缘,VACNFs上消除了ALD之前在碳纳米管表面引发共价键所需的预功能化。在依次暴露于H2O和三甲基铝的情况下,石墨边缘提供了理想的成核位点,从而形成厚度达20 nm的Al2O3涂层。高分辨率透射电子显微镜(HRTEM)和扫描电子显微镜图像证实了保形的核壳AZO/Al2O3/CNF结构,而能量色散X射线光谱验证了不同层的元素组成。HRTEM选区电子衍射表明,在200°C下通过ALD制备的Al2O3为非晶态,然后在450°C空气中退火30分钟后转变为多晶形式。然而,在这两种情况下,通过循环伏安法在1000 V/s的扫描速率下获得的介电常数相当,均为9.3。本文展示的保形核壳AZO/Al2O3/VACNF阵列结构为具有大表面积、薄且无泄漏电介质的固态电容器应用提供了一种有前景的三维架构。

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