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基于非晶硅的整体集成微通道板的制作与特性研究。

Fabrication and characterization of monolithically integrated microchannel plates based on amorphous silicon.

机构信息

Ecole Polytechnique Fédérale de Lausanne (EPFL), Photovoltaics and thin-film electronics laboratory (PV-Lab), Rue de la Maladière 71B, CH-2002 Neuchâtel, Switzerland.

出版信息

Sci Rep. 2014 Apr 4;4:4597. doi: 10.1038/srep04597.

Abstract

Microchannel plates are vacuum-based electron multipliers for particle--in particular, photon--detection, with applications ranging from image intensifiers to single-photon detectors. Their key strengths are large signal amplification, large active area, micrometric spatial resolution and picosecond temporal resolution. Here, we present the first microchannel plate made of hydrogenated amorphous silicon (a-Si:H) instead of lead glass. The breakthrough lies in the possibility of realizing amorphous silicon-based microchannel plates (AMCPs) on any kind of substrate. This achievement is based on mastering the deposition of an ultra-thick (80-120 μm) stress-controlled a-Si:H layer from the gas phase at temperatures of about 200 °C and micromachining the channels by dry etching. We fabricated AMCPs that are vertically integrated on metallic anodes of test structures, proving the feasibility of monolithic integration of, for instance, AMCPs on application-specific integrated circuits for signal processing. We show an electron multiplication factor exceeding 30 for an aspect ratio, namely channel length over aperture, of 12.5:1. This result was achieved for input photoelectron currents up to 100 pA, in the continuous illumination regime, which provides a first evidence of the a-Si:H effectiveness in replenishing the electrons dispensed in the multiplication process.

摘要

微通道板是基于真空的电子倍增器,用于粒子检测,特别是光子检测,其应用范围从像增强器到单光子探测器。其主要优点是信号放大倍数大、有效面积大、亚微米级空间分辨率和皮秒级时间分辨率。在这里,我们展示了第一个由氢化非晶硅(a-Si:H)而不是铅玻璃制成的微通道板。这一突破在于可以在任何类型的衬底上实现基于非晶硅的微通道板(AMCPs)。这一成果基于掌握了在约 200°C 的温度下从气相沉积超厚(80-120μm)的应力控制的 a-Si:H 层,并通过干法刻蚀对通道进行微加工。我们制造了垂直集成在测试结构金属阳极上的 AMCPs,证明了例如 AMCPs 与专用集成电路(ASIC)单片集成的可行性,用于信号处理。我们展示了一个纵横比(通道长度与孔径之比)为 12.5:1 时,超过 30 的电子倍增因子。这一结果是在连续照明模式下,输入光电电子电流高达 100pA 时实现的,这首次证明了 a-Si:H 在补充倍增过程中消耗的电子方面的有效性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e815/3975222/130688a9388a/srep04597-f1.jpg

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