Kwon Hobeom, Lee Hee Young, Lee Jai-Yeoul
J Nanosci Nanotechnol. 2014 May;14(5):3473-6. doi: 10.1166/jnn.2014.7805.
10 at% Li doped NiO thin films were prepared on glass and sapphire single crystal substrates by using pulsed-laser deposition (PLD) process. The effects of the substrate and the deposition temperature on the crystal structures, electrical, and optical properties of NiO thin films were studied by using XRD, 4 point probe, and UV-VIS spectrometer. The electrical conductivities and the optical properties of NiO thin films depend on the crystallinity of the thin films and substrate temperatures. The Li doped NiO thin film with electrical conductivity of 2.25 S/cm and optical transmittance of 80% was fabricated on the sapphire substrate when processing parameters were optimized.
采用脉冲激光沉积（PLD）工艺在玻璃和蓝宝石单晶衬底上制备了10 at%锂掺杂的NiO薄膜。利用X射线衍射仪（XRD）、四点探针和紫外可见光谱仪研究了衬底和沉积温度对NiO薄膜晶体结构、电学和光学性能的影响。NiO薄膜的电导率和光学性能取决于薄膜的结晶度和衬底温度。当工艺参数优化后，在蓝宝石衬底上制备出了电导率为2.25 S/cm、光学透过率为80%的锂掺杂NiO薄膜。
