Structure and characteristics of Li-doped NiO thin films prepared by using pulsed-laser deposition process.

10 at% Li doped NiO thin films were prepared on glass and sapphire single crystal substrates by using pulsed-laser deposition (PLD) process. The effects of the substrate and the deposition temperature on the crystal structures, electrical, and optical properties of NiO thin films were studied by using XRD, 4 point probe, and UV-VIS spectrometer. The electrical conductivities and the optical properties of NiO thin films depend on the crystallinity of the thin films and substrate temperatures. The Li doped NiO thin film with electrical conductivity of 2.25 S/cm and optical transmittance of 80% was fabricated on the sapphire substrate when processing parameters were optimized.