Jo GaeHun, Kang Jihye, Kamiko Masao, Ha Jae-Geun, Koo Sang-Mo, Koh Jung-Hyuk
School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea.
Institute of Industrial Science, The University of Tokyo, Meguro, Tokyo 153-8505, Japan.
J Nanosci Nanotechnol. 2020 Jan 1;20(1):520-523. doi: 10.1166/jnn.2020.17266.
In this study, Ga-doped ZnO thin films were prepared, and their potential for transparent conducting oxide applications was assessed. To increase the electrical mobility and reduce the resistance of Ga-doped ZnO thin films, CO₂ laser annealing was employed. Recently, the use of transparent conducting oxides (TCOs) have increased, particularly ZnO-based TCOs have been intensively investigated for display applications. To enhance the electrical and optical properties of ZnO thin films, Ga was used as a dopant. First, Ga-doped ZnO thin-film precursors were prepared by the sol-gel method. Subsequently, Ga-doped ZnO thin films were coated on glass substrates by spin coating. Electrical furnace treatment and rapid thermal annealing were employed to obtain and anneal a wurtzite ZnO based structure. The electrical and optical properties of the annealed thin films were optimized by varying the Ga doping concentration. Via Ga doping and optimized laser annealing, the resistivity of the ZnO film could be decreased from 16.32 Ω· cm to 0.45 Ω·cm; notably, the transmittance was similar (85%) in the 380-800 nm range. The transmittance properties of the films are not presented in this paper. Moreover, after an optical CO₂ laser annealing process, the conductivity of the films improved by more than 40 times. Furthermore, the electrical properties (mobility, resistivity, and bulk and sheet concentrations) of the CO₂-laser-annealed Ga-doped ZnO thin films were optimized.
在本研究中，制备了掺镓氧化锌薄膜，并评估了其在透明导电氧化物应用方面的潜力。为了提高掺镓氧化锌薄膜的电迁移率并降低其电阻，采用了二氧化碳激光退火。近年来，透明导电氧化物（TCO）的应用有所增加，特别是基于氧化锌的TCO在显示应用中受到了深入研究。为了提高氧化锌薄膜的电学和光学性能，使用镓作为掺杂剂。首先，通过溶胶-凝胶法制备掺镓氧化锌薄膜前驱体。随后，通过旋涂将掺镓氧化锌薄膜涂覆在玻璃基板上。采用电炉处理和快速热退火来获得并退火纤锌矿型氧化锌基结构。通过改变镓掺杂浓度来优化退火薄膜的电学和光学性能。通过镓掺杂和优化的激光退火，氧化锌薄膜的电阻率可从16.32Ω·cm降至0.45Ω·cm；值得注意的是，在380 - 800nm范围内，透光率相似（85%）。本文未呈现薄膜的透光率特性。此外，经过光学二氧化碳激光退火处理后，薄膜的电导率提高了40倍以上。此外，对二氧化碳激光退火的掺镓氧化锌薄膜的电学性能（迁移率、电阻率以及体浓度和面浓度）进行了优化。
