Switching mechanism in Au nanodot-embedded Nb2O5 memristors.

Resistive switching behavior of Au nanodot-embedded Nb2O5 memristor devices is reported. Due to controlled formation and/or rupture of conductive filaments; Au nanodot-embedded Nb2O5 devices show better consistency during transition from high to low resistance state and vice-versa. The memristive transition is explained using a physical model which involves oxygen ion, O(2-) trapping or detrapping at the metal-oxide interface, and O(2-) transport and annihilation with the oxygen vacancies in the breakdown percolation path. The experimental results indicate that Au nanodot-embedded Nb2O5 memristors may find applications as non-volatile memory devices.