Hota M K, Bera M K, Bera M K
J Nanosci Nanotechnol. 2014 May;14(5):3538-44. doi: 10.1166/jnn.2014.8249.
Resistive switching behavior of Au nanodot-embedded Nb2O5 memristor devices is reported. Due to controlled formation and/or rupture of conductive filaments; Au nanodot-embedded Nb2O5 devices show better consistency during transition from high to low resistance state and vice-versa. The memristive transition is explained using a physical model which involves oxygen ion, O(2-) trapping or detrapping at the metal-oxide interface, and O(2-) transport and annihilation with the oxygen vacancies in the breakdown percolation path. The experimental results indicate that Au nanodot-embedded Nb2O5 memristors may find applications as non-volatile memory devices.
报道了嵌入金纳米点的五氧化二铌忆阻器器件的电阻开关行为。由于导电细丝的可控形成和/或断裂，嵌入金纳米点的五氧化二铌器件在从高电阻状态转变为低电阻状态以及反之转变过程中表现出更好的一致性。使用一个物理模型来解释忆阻转变，该模型涉及氧离子O(2-)在金属-氧化物界面处的捕获或脱捕，以及O(2-)在击穿渗流路径中与氧空位的传输和湮灭。实验结果表明，嵌入金纳米点的五氧化二铌忆阻器可能会作为非易失性存储器件得到应用。
