双极电场增强铋铁氧体忆阻器中可移动施主的俘获与去俘获

Bipolar electric-field enhanced trapping and detrapping of mobile donors in BiFeO3 memristors.

作者信息

You Tiangui, Du Nan, Slesazeck Stefan, Mikolajick Thomas, Li Guodong, Bürger Danilo, Skorupa Ilona, Stöcker Hartmut, Abendroth Barbara, Beyer Andreas, Volz Kerstin, Schmidt Oliver G, Schmidt Heidemarie

机构信息

Material Systems for Nanoelectronics, Technische Universität Chemnitz , Chemnitz 09126, Germany.

出版信息

ACS Appl Mater Interfaces. 2014 Nov 26;6(22):19758-65. doi: 10.1021/am504871g. Epub 2014 Nov 14.

DOI:10.1021/am504871g

PMID:25366867

Abstract

Pulsed laser deposited Au-BFO-Pt/Ti/Sapphire MIM structures offer excellent bipolar resistive switching performance, including electroforming free, long retention time at 358 K, and highly stable endurance. Here we develop a model on modifiable Schottky barrier heights and elucidate the physical origin underlying resistive switching in BiFeO3 memristors containing mobile oxygen vacancies. Increased switching speed is possible by applying a large amplitude writing pulse as the resistive switching is tunable by both the amplitude and length of the writing pulse. The local resistive switching has been investigated by conductive atomic force microscopy and exhibits the capability of down-scaling the resistive switching cell to the grain size.

摘要

脉冲激光沉积的Au-BFO-Pt/Ti/蓝宝石MIM结构具有优异的双极电阻开关性能，包括无电形成、在358 K下具有长保持时间以及高度稳定的耐久性。在此，我们建立了一个关于可修改肖特基势垒高度的模型，并阐明了含可移动氧空位的BiFeO3忆阻器中电阻开关的物理起源。通过施加大幅度写入脉冲可以提高开关速度，因为电阻开关可由写入脉冲的幅度和长度调节。通过导电原子力显微镜研究了局部电阻开关，并展示了将电阻开关单元缩小到晶粒尺寸的能力。