Singh Shaivalini, Chakrabarti P
J Nanosci Nanotechnol. 2014 May;14(5):3552-6. doi: 10.1166/jnn.2014.8720.
ZnO based bottom-gate thin film transistor (TFT) with SiO2 as insulating layer has been fabricated with two different structures. The effect of formation of mesa structure on the electrical characteristics of the TFTs has been studied. The formation of mesa structure of ZnO channel region can definitely result in better control over channel region and enhance value of channel mobility of ZnO TFT. As a result, by fabricating a mesa structured TFT, a better value of mobility and on-state current are achieved at low voltages. A typical saturation current of 1.85 x 10(-7) A under a gate bias of 50 V is obtained for non mesa structure TFT while for mesa structured TFT saturation current of 5 x 10(-5) A can be obtained at comparatively very low gate bias of 6.4 V.
以二氧化硅作为绝缘层的氧化锌基底栅薄膜晶体管（TFT）采用了两种不同的结构进行制造。研究了台面结构的形成对TFT电学特性的影响。氧化锌沟道区台面结构的形成肯定能更好地控制沟道区，并提高氧化锌TFT的沟道迁移率值。结果，通过制造台面结构的TFT，在低电压下实现了更好的迁移率值和导通态电流。对于非台面结构的TFT，在50V的栅极偏压下典型饱和电流为1.85×10⁻⁷A，而对于台面结构的TFT，在相对非常低的6.4V栅极偏压下可获得5×10⁻⁵A的饱和电流。
