Singh Shaivalini, Chakrabarti P
Center for Research in Microelectronics, Department of Electronics Engineering, Institute of Technology, Banaras Hindu University, Varanasi 221005, India.
J Nanosci Nanotechnol. 2012 Mar;12(3):1880-5. doi: 10.1166/jnn.2012.5194.
We report the performance of the thin film transistors (TFTs) using ZnO as an active channel layer grown by radio frequency (RF) magnetron sputtering technique. The bottom gate type TFT, consists of a conventional thermally grown SiO2 as gate insulator onto p-type Si substrates. The X-ray diffraction patterns reveal that the ZnO films are preferentially orientated in the (002) plane, with the c-axis perpendicular to the substrate. A typical ZnO TFT fabricated by this method exhibits saturation field effect mobility of about 0.6134 cm2/V s, an on to off ratio of 102, an off current of 2.0 x 10(-7) A, and a threshold voltage of 3.1 V at room temperature. Simulation of this TFT is also carried out by using the commercial software modeling tool ATLAS from Silvaco-International. The simulated global characteristics of the device were compared and contrasted with those measured experimentally. The experimental results are in fairly good agreement with those obtained from simulation.
我们报告了使用通过射频（RF）磁控溅射技术生长的ZnO作为有源沟道层的薄膜晶体管（TFT）的性能。底栅型TFT由在p型Si衬底上作为栅极绝缘体的传统热生长SiO2组成。X射线衍射图谱表明，ZnO薄膜优先沿（002）平面取向，c轴垂直于衬底。通过这种方法制造的典型ZnO TFT在室温下表现出约0.6134 cm2/V s的饱和场效应迁移率、102的开/关比、2.0×10（-7）A的关电流和3.1 V的阈值电压。还使用来自Silvaco-International的商业软件建模工具ATLAS对该TFT进行了模拟。将器件的模拟全局特性与实验测量的特性进行了比较和对比。实验结果与模拟结果相当吻合。
