Derosa Pedro A, Michalak Tyler
J Nanosci Nanotechnol. 2014 May;14(5):3696-702. doi: 10.1166/jnn.2014.7973.
Electron transport in nanocomposites has attracted a good deal of attention for some time now; furthermore, the ability to control its characteristics is a necessary step in the design of multifunctional materials. When conductive nanostructures (for example carbon nanotubes) are inserted in a non-conductive matrix, electron transport below the percolation threshold is dominated by tunneling and thus the conductive characteristics of the composite depends heavily on the characteristics of the tunneling currents between nanoinserts. A parameter-free approach to study tunneling transport between carbon nanotubes across a polymer matrix is presented. The calculation is done with a combination of Density Functional Theory and Green functions (an approach heavily used in molecular electronics) which is shown here to be effective in this non-resonant transport condition. The results show that the method can effectively capture the effect of a dielectric layer in tunneling transport. The current is found to exponentially decrease with the size of the gap for both vacuum and polymer, and that the polymer layer lowers the tunneling barrier enhancing tunneling conduction. For a polyacrylonitrile matrix, a four-fold decrease in the tunneling constant, compared to tunneling in vacuum, is observed, a result that is consistent with available information. The method is very versatile as any DFT functional (or any other quantum mechanics method) can be used and thus the most accurate method for each particular system can be chosen. Furthermore as more methods become available, the calculations can be revised and improved. This approach can be used to design functional materials for fine-tunning the tunneling transport, for instance, the effect of modifying the nanoinsert-matrix interface (for example, by adding functional groups to carbon nanotubes) can be captured and the comparative performance of each interface predicted by simulation.
一段时间以来,纳米复合材料中的电子输运已引起了广泛关注;此外,控制其特性的能力是多功能材料设计中的必要步骤。当将导电纳米结构(例如碳纳米管)插入非导电基质中时,低于渗流阈值的电子输运主要由隧穿主导,因此复合材料的导电特性在很大程度上取决于纳米插入物之间隧穿电流的特性。本文提出了一种无参数方法来研究碳纳米管之间穿过聚合物基质的隧穿输运。计算是结合密度泛函理论和格林函数(分子电子学中大量使用的一种方法)进行的,在此显示该方法在这种非共振输运条件下是有效的。结果表明,该方法可以有效地捕捉介电层在隧穿输运中的作用。发现对于真空和聚合物,电流都随着间隙尺寸呈指数下降,并且聚合物层降低了隧穿势垒,增强了隧穿传导。对于聚丙烯腈基质,观察到与真空中的隧穿相比,隧穿常数降低了四倍,这一结果与现有信息一致。该方法非常通用,因为可以使用任何密度泛函(或任何其他量子力学方法),因此可以为每个特定系统选择最准确的方法。此外,随着更多方法的出现,计算可以得到修正和改进。这种方法可用于设计用于微调隧穿输运的功能材料,例如,可以捕捉修饰纳米插入物 - 基质界面的效果(例如,通过向碳纳米管添加官能团),并通过模拟预测每个界面的比较性能。