Liu Chuan, Khim Dong-Yoon, Noh Yong-Young
J Nanosci Nanotechnol. 2014 Feb;14(2):1476-93. doi: 10.1166/jnn.2014.9101.
Organic field-effect transistor (OFET) attracts great interests from scientific research and industrial application because of its low-cost fabrication and excellent mechanical flexibility. Yet the charge carrier mobility of typical OFET is still around 1-5 cm2/Vs and needs to be further enhanced, ideally by cost effective processes or treatments. Here we review one of the straightforward but effective methods, solvent vapor annealing (SVA), to improve the crystallinity of organic semiconductor film leading enhancement of charge carrier mobility in OFETs. We start by introducing the basic mechanism of SVA, followed by experimental works on small molecules and then conjugated polymers. Along with those examples, we discuss the important factors in using SVA to form highly crystalline conjugated molecule films or organic single crystals to achieve high performance OFETs.
有机场效应晶体管（OFET）因其低成本制造和出色的机械柔韧性而引起了科研和工业应用领域的极大兴趣。然而，典型OFET的载流子迁移率仍在1-5 cm2/Vs左右，需要通过经济高效的工艺或处理进一步提高。在此，我们回顾一种直接但有效的方法——溶剂蒸汽退火（SVA），以提高有机半导体薄膜的结晶度，从而提高OFET中的载流子迁移率。我们首先介绍SVA的基本机制，接着是关于小分子的实验工作，然后是共轭聚合物。通过这些例子，我们讨论了使用SVA形成高度结晶的共轭分子薄膜或有机单晶以实现高性能OFET时的重要因素。
