Khomyak Volodymyr V, Slyotov Olexiy M, Chupyra Sergiy M
Appl Opt. 2014 Apr 1;53(10):B110-5. doi: 10.1364/AO.53.00B110.
ZnO(1-x)Se(x) (0≤x≤0.11) thin films have been grown on sapphire (c-Al₂O₃) substrates at the temperature of 350°C by means of the radio-frequency magnetron sputtering technique. The optical transmission, reflectance, and luminescence spectra at room temperature were analyzed. Using the λ-modulation method gives the possibility to reveal the main features of the energy band structure and the nature of the radiative transitions that cause ultraviolet luminescence.
采用射频磁控溅射技术，在350°C的温度下，在蓝宝石（c-Al₂O₃）衬底上生长了ZnO(1-x)Se(x)（0≤x≤0.11）薄膜。分析了室温下的光透射、反射和发光光谱。使用λ调制方法能够揭示能带结构的主要特征以及导致紫外发光的辐射跃迁的性质。
