GaN 中 Eu³⁺ 的光学激发和外部光致发光量子效率。

Optical excitation and external photoluminescence quantum efficiency of Eu³⁺ in GaN.

机构信息

Van der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands.

Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Osaka, Japan.

出版信息

Sci Rep. 2014 Jun 10;4:5235. doi: 10.1038/srep05235.

DOI:10.1038/srep05235

PMID:24913315

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4050378/

Abstract

We investigate photoluminescence of Eu-related emission in a GaN host consisting of thin layers grown by organometallic vapor-phase epitaxy. By comparing it with a reference sample of Eu-doped Y₂O₃, we find that the fraction of Eu(3+) ions that can emit light upon optical excitation is of the order of 1%. We also measure the quantum yield of the Eu-related photoluminescence and find this to reach (~~10%) and (~~3%) under continuous wave and pulsed excitation, respectively.

摘要

我们研究了由有机金属气相外延生长的薄膜组成的 GaN 基质中与 Eu 相关的发射的光致发光。通过将其与掺 Eu 的 Y₂O₃ 参考样品进行比较，我们发现可以在光激发下发光的 Eu(3+)离子的分数约为 1%。我们还测量了 Eu 相关光致发光的量子产率，发现分别在连续波和脉冲激发下，其达到 (~~10%)和 (~~3%)。