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双掺杂GaN(Mg):Eu中的滞后光致变色开关(HPS):近期结果总结

Hysteretic Photochromic Switching (HPS) in Doubly Doped GaN(Mg):Eu-A Summary of Recent Results.

作者信息

Edwards Paul R, O'Donnell Kevin P, Singh Akhilesh K, Cameron Douglas, Lorenz Katharina, Yamaga Mitsuo, Leach Jacob H, Kappers Menno J, Boćkowski Michal

机构信息

SUPA Department of Physics, University of Strathclyde, 107 Rottenrow, Glasgow G4 0NG, UK.

Alternative Energy Materials, CSIR-National Physical Laboratory, New Delhi-110012, India.

出版信息

Materials (Basel). 2018 Sep 22;11(10):1800. doi: 10.3390/ma11101800.

Abstract

Europium is the most-studied and least-well-understood rare earth ion (REI) dopant in GaN. While attempting to increase the efficiency of red GaN light-emitting diodes (LEDs) by implanting Eu⁺ into p-type GaN templates, the Strathclyde University group, in collaboration with IST Lisbon and Unipress Warsaw, discovered hysteretic photochromic switching (HPS) in the photoluminescence spectrum of doubly doped GaN(Mg):Eu. Our recent work, summarised in this contribution, has used time-, temperature- and light-induced changes in the Eu intra-4 shell emission spectrum to deduce the microscopic nature of the Mg-Eu defects that form in this material. As well as shedding light on the Mg acceptor in GaN, we propose a possible role for these emission centres in quantum information and computing.

摘要

铕是氮化镓中研究最多但了解最少的稀土离子(REI)掺杂剂。在试图通过将Eu⁺注入p型氮化镓模板来提高红色氮化镓发光二极管(LED)的效率时,斯特拉斯克莱德大学的研究小组与里斯本高等技术学院和华沙Unipress合作,在双掺杂氮化镓(Mg):Eu的光致发光光谱中发现了滞后光致变色开关(HPS)。我们在本论文中总结的近期工作,利用了铕4壳层内发射光谱随时间、温度和光诱导的变化,来推断这种材料中形成的Mg-Eu缺陷的微观性质。除了揭示氮化镓中的镁受主外,我们还提出了这些发射中心在量子信息和计算中的可能作用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dc22/6213339/95a689bf3ab4/materials-11-01800-g001.jpg

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