School of Chemical Engineering, Sungkyunkwan University, Suwon, 440-746, South Korea.
Small. 2014 Oct 29;10(20):4142-6. doi: 10.1002/smll.201400251. Epub 2014 Jun 10.
About 30 nm quantum-dot thin films are formed by electrospray deposition (ESD) process and quantum-dot-light-emitting-diodes (QD-LEDs) are demonstrated. Maximum brightness of 23 000 cd m(-2) and current efficiency of 5.9 cd A(-1) are achieved with the ESD process. The ESD process can be a potential solution for large area quantum dot layers with simple and flexible control.
通过电喷沉积（ESD）工艺形成了约 30nm 的量子点薄膜，并展示了量子点发光二极管（QD-LED）。ESD 工艺实现了 23000cd/m²的最大亮度和 5.9cd/A 的电流效率。ESD 工艺是一种具有简单灵活控制的大面积量子点层的潜在解决方案。
