Ji Xiaoli, Wei Tongbo, Yang Fuhua, Lu Hongxi, Wei Xuecheng, Ma Ping, Yi Xiaoyan, Wang Junxi, Zeng Yiping, Wang Guohong, Li Jinmin
Opt Express. 2014 May 5;22 Suppl 3:A1001-8. doi: 10.1364/OE.22.0A1001.
Polarization-reversed electron-blocking structure, which had negative polarization charges localized at the interface between the last quantum barrier (LQB) and electron-blocking layer (EBL), was demonstrated to remarkably improve the light-emitting efficiency of GaN-based blue light-emitting diodes (LEDs) numerically and experimentally. The improvement was attributed to the enhanced electron-blocking effectiveness by the elevated conduction band nearby the LQB/EBL interface. Nevertheless, the efficiency droop was not mitigated because the decrease of electron-leakage was accompanied by the increase of Auger recombination.
