Velpula Ravi Teja, Jain Barsha, Bui Ha Quoc Thang, Shakiba Fatemeh Mohammadi, Jude Jeffrey, Tumuna Moses, Nguyen Hoang-Duy, Lenka Trupti Ranjan, Nguyen Hieu Pham Trung
Appl Opt. 2020 Jun 10;59(17):5276-5281. doi: 10.1364/AO.394149.
This paper reports the illustration of electron blocking layer (EBL)-free AlGaN light-emitting diodes (LEDs) operating in the deep-ultraviolet (DUV) wavelength at ∼270. In this work, we demonstrated that the integration of an optimized thin undoped AlGaN strip layer in the middle of the last quantum barrier (LQB) could generate enough conduction band barrier height for the effectively reduced electron overflow into the - region. Moreover, the hole injection into the multi-quantum-well active region is significantly increased due to a large hole accumulation at the interface of the AlGaN strip and the LQB. As a result, the internal quantum efficiency and output power of the proposed LED structure has been enhanced tremendously compared to that of the conventional - EBL-based LED structure.
本文报道了在约270纳米深紫外（DUV）波长下工作的无电子阻挡层（EBL）的AlGaN发光二极管（LED）的示例。在这项工作中，我们证明了在最后一个量子势垒（LQB）中间集成优化的薄未掺杂AlGaN条形层，可以产生足够的导带势垒高度，以有效减少电子溢出到 - 区域。此外，由于在AlGaN条形层与LQB的界面处有大量空穴积累，空穴注入多量子阱有源区的量显著增加。结果，与传统的基于 - EBL的LED结构相比，所提出的LED结构的内部量子效率和输出功率得到了极大提高。
