Shi Chentian, Zhang Chunfeng, Yang Fan, Park Min Joo, Kwak Joon Seop, Jung Sukkoo, Choi Yoon-Ho, Wang Xiaoyong, Xiao Min
Opt Express. 2014 May 5;22 Suppl 3:A790-9. doi: 10.1364/OE.22.00A790.
Efficiency droop is a major obstacle facing high-power application of InGaN/GaN quantum-well (QW) light-emitting diodes (LEDs). In this paper, we report the suppression of efficiency droop induced by the process of density-activated defect recombination in nanorod structures of a-plane InGaN/GaN QWs. In the high carrier density regime, the retained emission efficiency in a dry-etched nanorod sample is observed to be over two times higher than that in its parent QW sample. We further argue that such improvement is a net effect that the lateral carrier confinement overcomes the increased surface trapping introduced during fabrication.
效率 droop 是 InGaN/GaN 量子阱 (QW) 发光二极管 (LED) 高功率应用面临的主要障碍。在本文中，我们报道了在 a 面 InGaN/GaN QW 的纳米棒结构中，由密度激活缺陷复合过程引起的效率 droop 的抑制情况。在高载流子密度区域，观察到干法蚀刻纳米棒样品中的保留发射效率比其母体 QW 样品中的高出两倍以上。我们进一步认为，这种改进是横向载流子限制克服了制造过程中引入的增加的表面俘获的净效应。
