具有大重叠量子阱的高内量子效率绿色氮化铟镓发光二极管的方法

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells.

作者信息

Zhao Hongping, Liu Guangyu, Zhang Jing, Poplawsky Jonathan D, Dierolf Volkmar, Tansu Nelson

机构信息

Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, Pennsylvania 18015, USA.

出版信息

Opt Express. 2011 Jul 4;19 Suppl 4:A991-A1007. doi: 10.1364/OE.19.00A991.

DOI:10.1364/OE.19.00A991

PMID:21747571

Abstract

Optimization of internal quantum efficiency (IQE) for InGaN quantum wells (QWs) light-emitting diodes (LEDs) is investigated. Staggered InGaN QWs with large electron-hole wavefunction overlap and improved radiative recombination rate are investigated for nitride LEDs application. The effect of interface abruptness in staggered InGaN QWs on radiative recombination rate is studied. Studies show that the less interface abruptness between the InGaN sub-layers will not affect the performance of the staggered InGaN QWs detrimentally. The growths of linearly-shaped staggered InGaN QWs by employing graded growth temperature grading are presented. The effect of current injection efficiency on IQE of InGaN QWs LEDs and other approaches to reduce dislocation in InGaN QWs LEDs are also discussed. The optimization of both radiative efficiency and current injection efficiency in InGaN QWs LEDs are required for achieving high IQE devices emitting in the green spectral regime and longer.

摘要

研究了用于氮化铟镓量子阱（QW）发光二极管（LED）的内量子效率（IQE）的优化。研究了具有大电子 - 空穴波函数重叠和提高的辐射复合率的交错式氮化铟镓量子阱，用于氮化物发光二极管应用。研究了交错式氮化铟镓量子阱中界面陡度对辐射复合率的影响。研究表明，氮化铟镓子层之间较小的界面陡度不会对交错式氮化铟镓量子阱的性能产生不利影响。介绍了通过采用渐变生长温度梯度来生长线性形状的交错式氮化铟镓量子阱。还讨论了电流注入效率对氮化铟镓量子阱发光二极管IQE的影响以及降低氮化铟镓量子阱发光二极管中位错的其他方法。为了实现发射绿色及更长光谱范围的高IQE器件，需要优化氮化铟镓量子阱发光二极管的辐射效率和电流注入效率。