Choi Hojong, Shung K Kirk
NIH Transducer Resource Center and Department of Biomedical Engineering, University of Southern California, Los Angeles, CA, USA.
Biomed Eng Online. 2014 Jun 12;13:76. doi: 10.1186/1475-925X-13-76.
The ultrasonic transducer is one of the core components of ultrasound systems, and the transducer's sensitivity is significantly related the loss of electronic components such as the transmitter, receiver, and protection circuit. In an ultrasonic device, protection circuits are commonly used to isolate the electrical noise between an ultrasound transmitter and transducer and to minimize unwanted discharged pulses in order to protect the ultrasound receiver. However, the performance of the protection circuit and transceiver obviously degrade as the operating frequency or voltage increases. We therefore developed a crossed SMPS (Switching Mode Power Supply) MOSFET-based protection circuit in order to maximize the sensitivity of high frequency transducers in ultrasound systems.The high frequency pulse signals need to trigger the transducer, and high frequency pulse signals must be received by the transducer. We therefore selected the SMPS MOSFET, which is the main component of the protection circuit, to minimize the loss in high frequency operation. The crossed configuration of the protection circuit can drive balanced bipolar high voltage signals from the pulser and transfer the balanced low voltage echo signals from the transducer.
The equivalent circuit models of the SMPS MOSFET-based protection circuit are shown in order to select the proper device components. The schematic diagram and operation mechanism of the protection circuit is provided to show how the protection circuit is constructed. The P-Spice circuit simulation was also performed in order to estimate the performance of the crossed MOSFET-based protection circuit.
We compared the performance of our crossed SMPS MOSFET-based protection circuit with a commercial diode-based protection circuit. At 60 MHz, our expander and limiter circuits have lower insertion loss than the commercial diode-based circuits. The pulse-echo test is typical method to evaluate the sensitivity of ultrasonic transducers. Therefore, we performed a pulse-echo test using a single element transducer in order to utilize the crossed SMPS MOSFET-based protection circuit in an ultrasound system.
The SMPS-based protection circuit could be a viable alternative that provides better sensitivity, especially for high frequency ultrasound applications.
超声换能器是超声系统的核心部件之一,换能器的灵敏度与发射机、接收机和保护电路等电子元件的损耗显著相关。在超声设备中,保护电路通常用于隔离超声发射机和换能器之间的电噪声,并使不需要的放电脉冲最小化,以保护超声接收机。然而,随着工作频率或电压的增加,保护电路和收发器的性能明显下降。因此,我们开发了一种基于交叉开关电源(SMPS)MOSFET的保护电路,以最大化超声系统中高频换能器的灵敏度。高频脉冲信号需要触发换能器,并且高频脉冲信号必须被换能器接收。因此,我们选择了作为保护电路主要部件的SMPS MOSFET,以最小化高频操作中的损耗。保护电路的交叉配置可以驱动来自脉冲发生器的平衡双极高压信号,并传输来自换能器的平衡低压回波信号。
展示了基于SMPS MOSFET的保护电路的等效电路模型,以便选择合适的器件组件。提供了保护电路的原理图和操作机制,以说明保护电路是如何构建的。还进行了P-Spice电路仿真,以估计基于交叉MOSFET的保护电路的性能。
我们将基于交叉SMPS MOSFET的保护电路的性能与基于商用二极管的保护电路进行了比较。在60MHz时,我们的扩展器和限幅器电路的插入损耗低于基于商用二极管的电路。脉冲回波测试是评估超声换能器灵敏度的典型方法。因此,我们使用单元件换能器进行了脉冲回波测试,以便在超声系统中使用基于交叉SMPS MOSFET的保护电路。
基于SMPS的保护电路可能是一种可行的替代方案,特别是对于高频超声应用,它能提供更好的灵敏度。