Wang De Yu, Yan Qian, Wang Bing, Wang Yuan Xu, Yang Jueming, Yang Gui
Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China.
J Chem Phys. 2014 Jun 14;140(22):224704. doi: 10.1063/1.4882071.
By using developed particle swarm optimization algorithm on crystal structural prediction, we have explored the possible crystal structures of B-C system. Their structures, stability, elastic properties, electronic structure, and chemical bonding have been investigated by first-principles calculations with density functional theory. The results show that all the predicted structures are mechanically and dynamically stable. An analysis of calculated enthalpy with pressure indicates that increasing of boron content will increase the stability of boron carbides under low pressure. Moreover, the boron carbides with rich carbon content become more stable under high pressure. The negative formation energy of predicted B5C indicates its high stability. The density of states of B5C show that it is p-type semiconducting. The calculated theoretical Vickers hardnesses of B-C exceed 40 GPa except B4C, BC, and BC4, indicating they are potential superhard materials. An analysis of Debye temperature and electronic localization function provides further understanding chemical and physical properties of boron carbide.
通过将改进的粒子群优化算法应用于晶体结构预测,我们探索了硼碳(B-C)体系可能的晶体结构。利用密度泛函理论的第一性原理计算研究了它们的结构、稳定性、弹性性质、电子结构和化学键。结果表明,所有预测结构在力学和动力学上都是稳定的。对计算得到的焓随压力的分析表明,硼含量的增加会提高碳化硼在低压下的稳定性。此外,富碳的碳化硼在高压下变得更稳定。预测的B5C的负形成能表明其具有高稳定性。B5C的态密度表明它是p型半导体。除了B4C、BC和BC4外,计算得到的硼碳化物的理论维氏硬度超过40 GPa,表明它们是潜在的超硬材料。对德拜温度和电子局域函数的分析进一步加深了对碳化硼化学和物理性质的理解。