一种将 CdS 量子点敏化 TiO2 纳米管阵列分散到 P3HT:PCBM 层中的新方法，可提高倒置聚合物太阳能电池的效率。

A new method to disperse CdS quantum dot-sensitized TiO2 nanotube arrays into P3HT:PCBM layer for the improvement of efficiency of inverted polymer solar cells.

机构信息

Key Laboratory of Photovoltaic Materials, Department of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China.

Department of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China.

出版信息

Nanoscale Res Lett. 2014 May 16;9(1):240. doi: 10.1186/1556-276X-9-240. eCollection 2014.

DOI:10.1186/1556-276X-9-240

PMID:24936158

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4046037/

Abstract

We report that the efficiency of ITO/nc-TiO2/P3HT:PCBM/MoO3/Ag inverted polymer solar cells (PSCs) can be improved by dispersing CdS quantum dot (QD)-sensitized TiO2 nanotube arrays (TNTs) in poly (3-hexylthiophene) and [6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) layer. The CdS QDs are deposited on the TNTs by a chemical bath deposition method. The experimental results show that the CdS QD-sensitized TNTs (CdS/TNTs) do not only increase the light absorption of the P3HT:PCBM layer but also reduce the charge recombination in the P3HT:PCBM layer. The dependence of device performances on cycles of CdS deposition on the TNTs was investigated. A high power conversion efficiency (PCE) of 3.52% was achieved for the inverted PSCs with 20 cyclic depositions of CdS on TNTs, which showed a 34% increase compared to the ITO/nc-TiO2/P3HT:PCBM/MoO3/Ag device without the CdS/TNTs. The improved efficiency is attributed to the improved light absorbance and the reduced charge recombination in the active layer.

摘要

我们报告说，通过在聚（3-己基噻吩）和[6,6]-苯基-C61-丁酸甲酯（P3HT：PCBM）层中分散 CdS 量子点（QD）敏化的 TiO2 纳米管阵列（TNTs），可以提高 ITO/nc-TiO2/P3HT：PCBM/MoO3/Ag 倒置聚合物太阳能电池（PSCs）的效率。CdS QDs 通过化学浴沉积法沉积在 TNTs 上。实验结果表明，CdS QD 敏化的 TNTs（CdS/TNTs）不仅增加了 P3HT：PCBM 层的光吸收，而且还减少了 P3HT：PCBM 层中的电荷复合。研究了 CdS 在 TNTs 上沉积循环次数对器件性能的影响。对于在 TNTs 上进行 20 次 CdS 沉积的倒置 PSCs，实现了 3.52%的高功率转换效率（PCE），与没有 CdS/TNTs 的 ITO/nc-TiO2/P3HT：PCBM/MoO3/Ag 器件相比，增加了 34%。效率的提高归因于活性层中光吸收的提高和电荷复合的减少。