Li Fumin, Chen Chong, Tan Furui, Li Chunxi, Yue Gentian, Shen Liang, Zhang Weifeng
Key Laboratory of Photovoltaic Materials, Department of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China.
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, People's Republic of China.
Nanoscale Res Lett. 2014 Oct 17;9(1):579. doi: 10.1186/1556-276X-9-579. eCollection 2014.
We report a new semitransparent inverted polymer solar cell (PSC) with a structure of glass/FTO/nc-TiO2/P3HT:PCBM/MoO3/Ag/MoO3. Because high-temperature annealing which decreased the conductivity of indium tin oxide (ITO) must be handled in the process of preparation of nanocrystalline titanium oxide (nc-TiO2), we replace glass/ITO with a glass/fluorine-doped tin oxide (FTO) substrate to improve the device performance. The experimental results show that the replacing FTO substrate enhances light transmittance between 400 and 600 nm and does not change sheet resistance after annealing treatment. The dependence of device performances on resistivity, light transmittance, and thickness of the MoO3/Ag/MoO3 film was investigated. High power conversion efficiency (PCE) was achieved for FTO substrate inverted PSCs, which showed about 75% increase compared to our previously reported ITO substrate device at different thicknesses of the MoO3/Ag/MoO3 transparent electrode films illuminated from the FTO side (bottom side) and about 150% increase illuminated from the MoO3/Ag/MoO3 side (top side).
我们报道了一种新型的半透明倒置聚合物太阳能电池（PSC），其结构为玻璃/FTO/纳米晶TiO₂/P3HT:PCBM/MoO₃/Ag/MoO₃。由于在制备纳米晶二氧化钛（nc-TiO₂）的过程中必须进行高温退火，而这会降低氧化铟锡（ITO）的导电性，因此我们用玻璃/氟掺杂氧化锡（FTO）衬底替代玻璃/ITO，以提高器件性能。实验结果表明，替换FTO衬底可提高400至600纳米之间的透光率，并且在退火处理后不会改变方阻。研究了器件性能对MoO₃/Ag/MoO₃薄膜的电阻率、透光率和厚度的依赖性。对于FTO衬底倒置PSC，实现了高功率转换效率（PCE），在从FTO侧（底部）照射不同厚度的MoO₃/Ag/MoO₃透明电极薄膜时，与我们之前报道的ITO衬底器件相比，功率转换效率提高了约75%；在从MoO₃/Ag/MoO₃侧（顶部）照射时，提高了约150%。
Zotero 插件
