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采用类量子阱多发射层结构的高效蓝色有机发光二极管。

Highly efficient blue organic light-emitting diodes using quantum well-like multiple emissive layer structure.

机构信息

Department of Green Energy & Semiconductor Engineering, Hoseo University, Asan 336-795, South Korea.

Department of Physics, Hong Kong Baptist University, Hong Kong, China.

出版信息

Nanoscale Res Lett. 2014 Apr 24;9(1):191. doi: 10.1186/1556-276X-9-191. eCollection 2014.

Abstract

In this study, the properties of blue organic light-emitting diodes (OLEDs), employing quantum well-like structure (QWS) that includes four different blue emissive materials of 4,4'-bis(2,2'-diphenylyinyl)-1,1'-biphenyl (DPVBi), 9,10-di(naphth-2-yl)anthracene (ADN), 2-(N,N-diphenyl-amino)-6-[4-(N,N-diphenyl amine)styryl]naphthalene (DPASN), and bis(2-methyl-8-quinolinolate)-4-(phenyl phenolato) aluminum (BAlq), were investigated. Conventional QWS blue OLEDs composed of multiple emissive layers and charge blocking layer with lower highest occupied molecular orbital (HOMO)-lowest unoccupied molecular orbital (LUMO) energy level, and devices with triple emissive layers for more significant hole-electron recombination and a wider region for exciton generation were designed. The properties of triple emissive layered blue OLEDs with the structure of indium tin oxide (ITO) /N,N'-diphenyl-N,N'-bis(1-naphthyl-phenyl)-(1,1'-biphenyl)-4,4'-diamine (NPB) (700 Ǻ)/X (100 Ǻ)/BAlq (100 Ǻ)/X (100 Ǻ)/4,7-diphenyl-1,10-phenanthroline (Bphen) (300 Ǻ)/lithium quinolate (Liq) (20 Ǻ)/aluminum (Al) (1,200 Ǻ) (X = DPVBi, ADN, DPASN) were examined. HOMO-LUMO energy levels of DPVBi, ADN, DPASN, and BAlq are 2.8 to 5.9, 2.6 to 5.6, 2.3 to 5.2, and 2.9 to 5.9 eV, respectively. The OLEDs with DPASN/BAlq/DPASN QWS with maximum luminous efficiency of 5.32 cd/A was achieved at 3.5 V.

摘要

在这项研究中,我们研究了采用量子阱结构(QWS)的蓝色有机发光二极管(OLED)的特性,该结构包括四种不同的蓝色发射材料:4,4'-双(2,2'-二苯基芴基)-1,1'-联苯(DPVBi)、9,10-二(萘-2-基)蒽(ADN)、2-(N,N-二苯基氨基)-6-[4-(N,N-二苯基氨基)-2-苯乙烯基]萘(DPASN)和双(2-甲基-8-喹啉基)-4-(苯基苯酚基)铝(BAlq)。我们研究了由多个发射层和具有较低最高占据分子轨道(HOMO)-最低未占据分子轨道(LUMO)能级的空穴阻挡层组成的传统 QWS 蓝色 OLED,以及具有三重发射层的器件,以实现更显著的空穴-电子复合和更宽的激子产生区域。我们设计了具有铟锡氧化物(ITO)/N,N'-二苯基-N,N'-双(1-萘基苯基)-(1,1'-联苯)-4,4'-二胺(NPB)(700 埃)/X(100 埃)/BAlq(100 埃)/X(100 埃)/4,7-二苯基-1,10-菲咯啉(Bphen)(300 埃)/锂喹啉酸盐(Liq)(20 埃)/铝(Al)(1200 埃)(X=DPVBi、ADN、DPASN)结构的三重发射层蓝色 OLED 的特性。DPVBi、ADN、DPASN 和 BAlq 的 HOMO-LUMO 能级分别为 2.8 至 5.9、2.6 至 5.6、2.3 至 5.2 和 2.9 至 5.9 eV。在 3.5 V 时,采用 DPASN/BAlq/DPASN QWS 的 OLED 实现了最大发光效率为 5.32 cd/A。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1fe6/4036430/6e1ea4675cf8/1556-276X-9-191-1.jpg

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