结构焊接的 ZnSnO3 纳米线阵列中优越铁电性的证据。
Evidence of superior ferroelectricity in structurally welded ZnSnO3 nanowire arrays.
机构信息
Florida Cluster for Advanced Smart Sensor, Technologies & Department of Physics, University of South Florida, Tampa, FL, 33620, USA.
出版信息
Small. 2014 Oct 29;10(20):4093-9. doi: 10.1002/smll.201401249. Epub 2014 Jun 23.
PMID:24955557
Abstract
Highly packed LN-type ZnSnO3 NW arrays are grown on ZnO:Al/Si substrates using a hybrid pulsed laser deposition and solvothermal process. Unique "welding" mechanism structurally joins adjacent ZnSnO3 NWs to form a nearly impervious 20 μm thick nanostructured film that shows high P r of 30 μC/cm(2) at a low E c of 25 kV/cm for the first time.
摘要
采用混合脉冲激光沉积和溶剂热工艺在 ZnO:Al/Si 衬底上生长了高度致密的 LN 型 ZnSnO3 NW 阵列。独特的“焊接”机制将相邻的 ZnSnO3 NW 结构上连接在一起，形成了一层几乎不透气的 20 μm 厚的纳米结构薄膜，首次在低 E c 为 25 kV/cm 的情况下实现了高 P r 为 30 μC/cm(2)。
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