Li J, Pud S, Mayer D, Vitusevich S
Peter Grünberg Institute (PGI-8), Forschungszentrum Jülich, Jülich 52425, Germany.
Nanotechnology. 2014 Jul 11;25(27):275302. doi: 10.1088/0957-4484/25/27/275302. Epub 2014 Jun 24.
In this paper we present fabricated Si nanowires (NWs) of different dimensions with enhanced electrical characteristics. The parallel fabrication process is based on nanoimprint lithography using high-quality molds, which facilitates the realization of 50 nm-wide NW field-effect transistors (FETs). The imprint molds were fabricated by using a wet chemical anisotropic etching process. The wet chemical etch results in well-defined vertical sidewalls with edge roughness (3σ) as small as 2 nm, which is about four times better compared with the roughness usually obtained for reactive-ion etching molds. The quality of the mold was studied using atomic force microscopy and scanning electron microscopy image data. The use of the high-quality mold leads to almost 100% yield during fabrication of Si NW FETs as well as to an exceptional quality of the surfaces of the devices produced. To characterize the Si NW FETs, we used noise spectroscopy as a powerful method for evaluating device performance and the reliability of structures with nanoscale dimensions. The Hooge parameter of fabricated FET structures exhibits an average value of 1.6 × 10(-3). This value reflects the high quality of Si NW FETs fabricated by means of a parallel approach that uses a nanoimprint mold and cost-efficient technology.
在本文中，我们展示了具有增强电学特性的不同尺寸的人造硅纳米线（NWs）。并行制造工艺基于使用高质量模具的纳米压印光刻技术，这有助于实现50纳米宽的NW场效应晶体管（FET）。压印模具是通过湿法化学各向异性蚀刻工艺制造的。湿法化学蚀刻产生了定义明确的垂直侧壁，其边缘粗糙度（3σ）小至2纳米，与反应离子蚀刻模具通常获得的粗糙度相比，约好四倍。使用原子力显微镜和扫描电子显微镜图像数据研究了模具的质量。高质量模具的使用在制造Si NW FET期间导致几乎100%的成品率，以及所生产器件表面的卓越质量。为了表征Si NW FET，我们使用噪声光谱作为评估器件性能和具有纳米级尺寸结构可靠性的有力方法。制造的FET结构的胡格参数呈现出1.6×10（-3）的平均值。该值反映了通过使用纳米压印模具和具有成本效益的技术的并行方法制造的Si NW FET的高质量。
