Martinez-Morales A A, Penchev M, Zhong J, Jing X, Singh K V, Yengel E, Khan M I, Ozkan C S, Ozkan M
Department of Electrical Engineering, University of California, Riverside, California 92521, USA.
J Nanosci Nanotechnol. 2010 Oct;10(10):6779-82. doi: 10.1166/jnn.2010.3108.
In this work high quality crystalline In(1_x)Sb(x) nanowires (NWs) are synthesized via a template-based electrochemistry method. Energy dispersive spectroscopy studies show that composition modulated In(1-x)Sb(x) (x approximately 0.5 or 0.7) nanowires can be attained by selectively controlling the deposition potential during growth. Single In(1-x)Sb(x) nanowire field effect transistors (NW-FETs) are fabricated to study the electrical properties of as-grown NWs. Using scanning gate microscopy (SGM) as a local gate the I(ds)-V(ds) characteristics of the fabricated devices are modulated as a function of the applied gate voltage. Electrical transport measurements show n-type semiconducting behavior for the In0.5Sb0.5 NW-FET, while a p-type behavior is observed for the In0.3Sb0.7 NW-FET device. The ability to grow composition modulated In(1-x)Sb(x) NWs can provide new opportunities for utilizing InSb NWs as building blocks for low-power and high speed nanoscale electronics.
在本工作中，通过基于模板的电化学方法合成了高质量的晶体铟锑（In(1_x)Sb(x)）纳米线（NWs）。能量色散光谱研究表明，通过在生长过程中选择性地控制沉积电位，可以获得成分调制的铟锑（In(1-x)Sb(x)）（x约为0.5或0.7）纳米线。制备了单个铟锑（In(1-x)Sb(x)）纳米线场效应晶体管（NW-FETs），以研究生长态纳米线的电学性质。使用扫描栅显微镜（SGM）作为局部栅极，所制备器件的I(ds)-V(ds)特性随施加的栅极电压而调制。电学输运测量表明，In0.5Sb0.5 NW-FET呈现n型半导体行为，而In0.3Sb0.7 NW-FET器件则观察到p型行为。生长成分调制的铟锑（In(1-x)Sb(x)）纳米线的能力可为将铟锑纳米线用作低功耗和高速纳米级电子器件的构建块提供新的机遇。
