Keum Chang-Min, Lee In-Ho, Lee Sin-Hyung, Lee Gyu Jeong, Kim Min-Hoi, Lee Sin-Doo
Opt Express. 2014 Jun 16;22(12):14750-6. doi: 10.1364/OE.22.014750.
We demonstrate a vertical-type organic light-emitting transistor (VOLET) with a network electrode of closed topology for quasi-surface emission. In our VOLET, the spatial distribution of the surface emission depends primarily on the relative scale of the aperture in the network electrode to the characteristic length for the charge carrier recombination. Due to the closed topology in the network of the source electrode, the charge transport and the resultant carrier recombination are substantially extended from individual network boundaries toward the corresponding aperture centers in the source electrode. The luminance was found to be well-controlled by the gate voltage through an organic semiconducting layer over the network source electrode.
我们展示了一种具有用于准表面发射的封闭拓扑网络电极的垂直型有机发光晶体管（VOLET）。在我们的VOLET中，表面发射的空间分布主要取决于网络电极中的孔径与电荷载流子复合特征长度的相对比例。由于源电极网络中的封闭拓扑，电荷传输以及由此产生的载流子复合从各个网络边界大幅延伸至源电极中相应的孔径中心。研究发现，通过网络源电极上方的有机半导体层，栅极电压能够很好地控制发光亮度。
