Sarjidan Mohd Arif Mohd, Shuhaimi Ahmad, Majid Wan Haliza Abd
Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, 50603 Kuala Lumpur, Malaysia.
J Nanosci Nanotechnol. 2019 Nov 1;19(11):6995-7003. doi: 10.1166/jnn.2019.16724.
A simple spin-coating process for fabricating vertical organic light-emitting transistors (VOLETs) is realized by utilizing silver nanowire (AgNW) as a source electrode. The optical, electrical and morphological properties of the AgNW formation was initially optimized, prior VOFET fabrication. A high molecular weight of poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] MEH-PPV was used as an organic semiconductor layer in the VOFET in forming a multilayer structure by solution process. It was found that current density and luminance intensity of the VOLET can be modulated by a small magnitude of gate voltage. The modulation process was induced by changing an injection barrier via gate voltage bias. A space-charge-limited current (SCLC) approach in determining transistor mobility has been introduced. This preliminary and fundamental work is beneficial towards all-solution processing display devices.
