Wu Jau-Yang, Lu Ping-Keng, Lin Sheng-Di
Opt Express. 2014 Jun 30;22(13):16462-71. doi: 10.1364/OE.22.016462.
Two-dimensional (2-D) photo-count mapping on CMOS single photon avalanche diodes (SPADs) has been demonstrated. Together with the varied incident wavelengths, the depth-dependent electric field distribution in active region has been investigated on two SPADs with different structures. Clear but different non-uniformity of photo-response have been observed for the two studied devices. With the help of simulation tool, the non-uniform photo-counts arising from the electric field non-uniformity have been well explained. As the quasi-3D distribution of electric field in the active region can be mapped, our method is useful for engineering the device structure to improve the photo-response of SPADs.
已证明在互补金属氧化物半导体单光子雪崩二极管（SPAD）上进行二维（2-D）光计数映射。结合不同的入射波长，对具有不同结构的两个SPAD的有源区中与深度相关的电场分布进行了研究。对于这两个研究的器件，观察到了清晰但不同的光响应不均匀性。借助仿真工具，很好地解释了由电场不均匀性引起的不均匀光计数。由于可以绘制有源区中电场的准三维分布，我们的方法对于设计器件结构以改善SPAD的光响应很有用。
