输出功率为400毫瓦、在445纳米处具有窄带发射的外腔二极管激光器。

400 mW external cavity diode laser with narrowband emission at 445 nm.

作者信息

Ruhnke N, Müller A, Eppich B, Maiwald M, Sumpf B, Erbert G, Tränkle G

出版信息

Opt Lett. 2014 Jul 1;39(13):3794-7. doi: 10.1364/OL.39.003794.

DOI:10.1364/OL.39.003794

Abstract

A high-power external cavity diode laser (ECDL) system with narrowband emission is presented. The system is based on a commercially available high-power GaN laser diode. For the ECDL, a maximum optical output power of 400 mW in continuous-wave operation with narrowband emission is achieved. Longitudinal mode selection is realized by using a surface diffraction grating in Littrow configuration. A spectral width of 20 pm at 445 nm with a side-mode suppression ratio larger than 40 dB is achieved. This concept enables diode laser systems suitable for subsequent nonlinear frequency conversion into the UV spectral range.

摘要

介绍了一种具有窄带发射的高功率外腔二极管激光器（ECDL）系统。该系统基于市售的高功率氮化镓激光二极管。对于该ECDL，在连续波运行且具有窄带发射的情况下，实现了400 mW的最大光输出功率。通过使用 Littrow 配置的表面衍射光栅实现纵向模式选择。在445 nm处实现了20 pm的光谱宽度，边模抑制比大于40 dB。这一概念使得二极管激光系统适用于后续非线性频率转换到紫外光谱范围。