Single-pass UV generation at 222.5 nm based on high-power GaN external cavity diode laser.
作者信息
Ruhnke N, Müller A, Eppich B, Güther R, Maiwald M, Sumpf B, Erbert G, Tränkle G
出版信息
Opt Lett. 2015 May 1;40(9):2127-9. doi: 10.1364/OL.40.002127.
PMID:25927802
Abstract
We demonstrate a compact system for single-pass frequency doubling of high-power GaN diode laser radiation. The deep UV laser light at 222.5 nm is generated in a β-BaB2O4 (BBO) crystal. A high-power GaN external cavity diode laser (ECDL) system in Littrow configuration with narrowband emission at 445 nm is used as pump source. At a pump power of 680 mW, a maximum UV power of 16 μW in continuous-wave operation at 222.5 nm is achieved. This concept enables a compact diode laser-based system emitting in the deep ultraviolet spectral range.
摘要
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