Leibovici Matthieu C R, Gaylord Thomas K
Opt Lett. 2014 Jul 1;39(13):3798-801. doi: 10.1364/OL.39.003798.
Pattern-integrated interference lithography (PIIL) has recently been proposed as a rapid, single-step, and wafer-scale fabrication technique for custom-modified one-, two- and three-dimensional periodic structures. Among these structures, photonic-crystal devices have significant potential applications. In this work, we simulate the fabrication of two-dimensional photonic-crystal devices by PIIL using a rigorous vector modeling and realistic photolithographic conditions. We also model the etched patterns in silicon and evaluate the photonic-crystal motif-area and motif-displacement errors. We further calculate the device intensity transmission spectra and show that the performance of PIIL-produced devices are comparable to, and in some cases are superior to, that of their idealized equivalents.
图案集成干涉光刻（PIIL）最近被提出作为一种用于定制修改一维、二维和三维周期性结构的快速、单步且晶圆级制造技术。在这些结构中，光子晶体器件具有重要的潜在应用。在这项工作中，我们使用严格的矢量建模和实际光刻条件，通过PIIL模拟二维光子晶体器件的制造。我们还对硅中的蚀刻图案进行建模，并评估光子晶体图案区域和图案位移误差。我们进一步计算了器件的强度透射光谱，结果表明，PIIL制造的器件性能与理想等效器件相当，在某些情况下甚至更优。
