Duan Xiaofeng, Huang Yongqing, Shang Yufeng, Wang Jun, Ren Xiaomin
Opt Lett. 2014 Apr 15;39(8):2447-50. doi: 10.1364/OL.39.002447.
A reflection-enhanced dual-absorption InP-PIN/GaAs-DBR photodetector was fabricated and characterized. The photodetector is monolithically integrated using a heteroepitaxy growth of an InGaAs/InP dual-absorption "PINIP" structure on the GaAs/AlGaAs Bragg reflectors. These features lead to an increase in quantum efficiency over a wide wavelength range while maintaining a high speed. The measured quantum efficiency was increased by 48.8% in comparison with that without reflectors. A quantum efficiency of 64% at a wavelength of 1522 nm and a 3 dB bandwidth of 26 GHz at a reverse bias of 3 V were simultaneously obtained in the device.
制作并表征了一种反射增强型双吸收InP-PIN/GaAs-DBR光电探测器。该光电探测器通过在GaAs/AlGaAs布拉格反射器上异质外延生长InGaAs/InP双吸收“PINIP”结构进行单片集成。这些特性使得在保持高速的同时，在很宽的波长范围内量子效率得到提高。与没有反射器的情况相比，测得的量子效率提高了48.8%。该器件在波长1522 nm处量子效率为64%，在3 V反向偏压下3 dB带宽为26 GHz。
